Earticle

미래의 통신망은 지상 네트워크과 위성 네트워크가 결합하거나 협동 통신 하는 방향으로 진화할 것으로 예상된다. 위성/지상 통합 시스템에서 위성과 지상 무선 인터페이스 간 공통성은 단말의 비용을 고려했을 때 매우 중요하게 고려되어야 한다. 특히, 차세대 IMT-Advanced 시스템으로 LTE기반의 지상 시스템이 고려되고 있는 점을 감안했을 때, LTE 기반의 위성 시스템에 대한 연구가 절실히 요구된다. 현존하는 LTE기반의 지상 무선 통신 시스템의 프레임은 최대 100 km 크기의 셀에서 임의 접속이 가능하도록 설계되어 있다. 그러나 위성 시스템의 경우 수 천 km에 이르는 빔 커버리지를 갖기 때문에 최대 100 km의 셀 크기를 고려하여 설계된 LTE프레임 구조 내에서 지상 시스템을 위한 임의 접속 방법을 그대로 적용할 수 없다. 따라서, 본 논문에서는 LTE기반 지상 시스템에서 지원하는 프레임 구조에서 시스템 latency를 줄이고 낮은 복잡도를 가지는 위성 시스템 환경에 적절한 임의 접속 절차를 제안하고자 한다.

The future of communication systems is expected to combine with the terrestrial and satellite networks. A commonality between wireless interfaces is important consideration for cost of user equipment in the integrated satellite and the terrestrial system. Because IMT-Advanced system take into account LTE based on the terrestrial system for the next generation of communication, a study of the LTE-based satellite system is especially required. A frame of the existing terrestrial wireless networks is designed to use for a random access up to the maximum cell radius of 100 km. However, the random access scheme for the terrestrial system cannot be used in the satellite system, because the satellite systems generally have large coverage than the terrestrial system. Therefore, we propose that the efficient random access procedure to reduce latency and complexity for the satellite system maintaining commonality with the terrestrial system in this paper.

For fast access to the cell, we propose an enhanced random access scheme exploiting multiple transmissions of random access preambles and random access responses. The proposed random access scheme decreases the latency of the random access procedure, by avoiding random access retrials from the beginning of the random access procedure due to the expiry of a random access response window. We also provide a model and analysis of random access latency with the average delay and the failure probability of random access procedure. The model of random access latency considers the collisions of random access preambles transmitted by multiple mobile stations to a base station as well as the error of random access response corresponding to the received random access preamble transmitted by the base station to the mobile station. Our numerical results in accordance with the model show that the proposed scheme provides lower latency.

Cellular networks will play an important role in realizing the newly emerging Internet-of-Everything (IoE). One of the challenging issues is to support the quality of service (QoS) during the access phase, while accommodating a massive number of machine nodes. In this paper, we show a new paradigm of multiple access priorities in random access (RA) procedure and propose a novel root-index based prioritized random access (RIPRA) scheme that implicitly embeds the access priority in the root index of the RA preambles. The performance evaluation shows that the proposed RIPRA scheme can successfully support differentiated performance for different access priority levels, even though there exist a massive number of machine nodes. Keywords: Internet-of-Everything; M2M; Random access; Zadoff?Chu sequence; Access priority

In this article, we propose a non-orthogonal resource scheduling (NORS) scheme with an enhanced preamble detection (PD) method for cellular random access (RA) systems. The enhanced PD method is designed based on a deep learning technique that can classify three PD statuses: idle, collision-free, and collision. Because of this collision resolution capability, the base station (BS) can exploit radio resources non-orthogonally in contention-based RA protocols. In addition, we mathematically analyze the performance of our proposed NORS scheme in terms of RA success probability and resource utilization efficiency and conduct a comparison with the baseline orthogonal resource scheduling (ORS) scheme. Through simulations, we verify the validity of our mathematical analysis. As a result, our results will be a useful guideline for resource scheduling and provide support for massive connectivity.

본 논문에서는 범용 시스템에서 널리 사용되는 버퍼캐쉬가 렌더링 소프트웨어 수행시 비효율적으로 동작한다는 것을 분석하고 이를 해결하는 렌더링 시스템용 버퍼캐쉬 관리 기법을 제안한다. 이를 위해 본 논문은 먼저 다양한 렌더링 파일 입출력 트레이스를 추출하여 렌더링의 고유한 입출력 패턴을 분석하였다. 그 결과 렌더링 파일 입출력은 주기가 긴 반복참조와 주기가 짧은 반복참조, 임의참조, 그리고 1회성 쓰기참조로 구성된다는 것을 발견하였다. 본 논문은 이러한 렌더 링의 파일참조 특성을 고려하여 버퍼캐쉬 공간을 참조별로 할당하고 그에 맞는 관리 기법을 제안하여 기존 버퍼캐쉬 대비 평균 19%, 최대 55%의 성능을 개선시켰다.

In this paper, we found that buffer cache in general systems does not perform well in rendering software, and presented a new buffer cache management scheme that resolves this problem. To do so, we collected various file I/O traces of rending software and analyzed their characteristics. From this analysis, we observed that file I/Os in rendering consist of long loops, short loops, random accesses, and write-once accesses. Based on this observation, we presented a buffer cache management scheme that allocates cache space to each access types and manages them appropriately, thereby improving the buffer cache performances by 19% on average and up to 55%.

In this paper, an average consumed energy for a unit data transmission in analyzed in frequency-agile cognitive radios. The average energy consumed by a random access protocol operated in a channel using a whole system bandwidth is compared with that operated in frequency-separated channels, which results in an energy saving ratio. The energy saving ratio quantitatively evaluates an energy saving effect by separating one whole bandwidth into more than one channel with a smaller bandwidth. Finally, it is shown that the frequency-separated channel can save energy of machine-to-machine communicating nodes using the random access protocol, so the battery life can be extended.

With the rapid growth of machine-type communications (MTC) devices, the radio access network (RAN) will be overloaded when a large number of MTC devices try to access the radio networks in a short time. In this paper, a combination of a dynamic resource allocation and a random access check mechanism is proposed to solve the overload problems for MTC in LTE-Advanced. An analytical model is presented with the derivation of three metrics, the collision probability, the success probability, and the idle probability to evaluate the method. Simulation and analysis results show the superior performance of the method we proposed to solve the RAN overload problem.

VLSI(Very Large Scale Integration)와 WSI(Wafer Scale Integration)와 같은 통합기술로 인해 큰 용량의 메모리 대량생산이 가능 하게 된 지금 Redundancy는 메모리 칩의 제조와 결함이 있는 셀을 지닌 디바이스를 치료하는데 광범위하게 사용되어져왔다. 메모리칩의 밀도가 증가함에 따라 결함의 빈도 또한 증가한다. 많은 결함이 있다면 어쩔 수 없겠지만 적은 결함이 발생한 경우에는 해당 다이를 reject 시키는 것 보다는 수선해서 사용하는 것이 메모리생산 업체 입장에서는 보다 효율적이고 원가 절감 차원에서 필수적이다. 이와 같은 이유로 laser repair라는 공정이 필요하고 laser repair공정의 정확한 타깃을 설정하기 위해 redundancy analysis가 필요하게 되었다. CRA시뮬레이션은 기존의 redundancy analysis 알고리즘의 개념에서 벗어나 결함 유형별로 시뮬레이션한 후 RA를 진행함으로써 RA에 소요되는 시간을 절약함으로써 원가 경쟁력 강화를 할 수 있다.

This has been possible by integration techniques such as very large scale integration (VLSI) and wafer scale integration (WSI). Redundancy has been extensively used for manufacturing memory chips and to provide repair of these devices in the presence of faulty cells. If there are too many defects, the momory has to be rejected. But if there are a few defects, it will be more efficient and cost reducing for the company to use it by repairing. Therefore, laser-repair process is nedded for such a reason and redundancy analysis is needed to establish correct target of laser-repair process. The proposed CRA (Correlation Repair Algorithm) simulation, beyond the idea of the conventional redundancy analysis algorithm, aims at reducing the time spent in the process and strengthening cost competitiveness by performing redundancy analysis after simulating each case of defect.

이동중인 단말에게 인터넷 서비스를 제공하고자 하는 WiBro 시스템은, 무선자원의 효율적인 사용을 위해서 전송할 데이터가 있는 단말들에게만 대역폭을 할당하는 demand-based 대역폭 할당 방식을 사용한다. 이때 여러 단말들이 동시에 데이터를 전송하고자할 경우 충돌이 발생하므로 이들의 전송순서를 정해주는 것이 필요하다. 기존의 WiBro 시스템에서는 binary exponential backoff algorithm 에 기초한 random access 기법을 사용하는데, 본 연구에서는 conflict resolution 기법에 기초한 새로운 random access 기법을 제안하고, 새로운 기법의 성능이 보다 우수함을 시뮬레이션을 통해 보였다.

본 논문은 $3^{rd}$ Generation Partnership Project(3GPP) Long Term Evolution-Advanced(LTE-A) 시스템을 기반으로 소량의 데이터를 송수신하는 M2M 기기가 무수히 존재하는 상황에서 발생할 수 있는 문제점을 고찰하고 이를 해결하기 위한 기술을 제시한다. 특별히, 무수히 존재하는 M2M 기기들로 인한 랜덤 액세스 채널의 부족과 이로 인한 지연(latency) 증가 문제를 해결하기 위해 M2M 그룹화 기술에 사용자 특성별로 구별하여 허용 가능한 액세스 시도 확률을 차별적으로 제어한다. M2M 기기들을 그룹화 하여 PRACH(Physical Random Access CHannel)의 랜덤 액세스(Random Access)를 시도하는 단말 수를 감소시키는 효과를 획득함과 동시에 셀룰러(Cellular) 통신을 하는 단말기와의 충돌을 줄임으로써, 기존 이동 통신 단말과 M2M 기기들이 공존하는 시스템의 랜덤 액세스 평균 지연(average latency) 증가 문제를 해결할 수 있음을 실험을 통해 증명한다.

This paper studies how to solve a problem caused by M2M terminals sending a few data based on $3^{rd}$ Generation Partnership Project(3GPP) Long Term Evolution-Advanced(LTE-A) system and then it is analyzed, proposed, and introduced into the techniques. Especially, it is introduced solution for the lack of Random Access Channel and an increasing number of latency caused by countless M2M devices. It is proposed the technology for M2M grouping as well as allowable access probability according to user type. As it decreases the number of terminal by grouping M2M devices to try random access at PRACH, it can be reduced collision between Cellular users and M2M devices. So, it is proved that the proposed mechanism can solve the increasing average latency of random access on system coexisting Cellular users and M2M devices through simulations.

The resistive memory switching characteristics of resistive random access memory (ReRAM) using the amorphous GeSe thin film have been demonstrated at Al/Ti/GeSe/$n^+$ poly Si structure. This ReRAM indicated bipolar resistive memory switching characteristics. The generation and the recombination of chalcogen cations and anions were suitable to explain the bipolar switching operation. Space charge limited current (SCLC) model and Poole-Frenkel emission is applied to explain the formation of conductive filament in the amorphous GeSe thin film. The results showed characteristics of stable switching and excellent reliability. Through the annealing condition of $400^{\circ}C$, the possibility of low temperature process was established. Very low operation current level (set current: ~ ${\mu}A$, reset current: ~ nA) was showed the possibility of low power consumption. Particularly, $n^+$ poly Si based GeSe ReRAM could be applied directly to thin film transistor (TFT).

A spin coating process for RRAM, which is a TiN/TiO₂/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (V_O), a major factor of the conductive filament. It was carried out at 100 ℃ under moisture removal conditions and at 300 ℃ and 500 ℃ for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti³⁺ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 ℃ showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 10⁴. The double-logarithmic plot of the I-V curve confirmed the device at 100 ℃ required a low operating voltage. As a result, the 100 ℃ heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO₂/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.

Resistive random access memory (ReRAM) of metallic conduction channel mechanism is based on the electrochemical control of metal in solid electrolyte thin film. Amorphous chalcogenide materials have the solid electrolyte characteristic and optical reactivity at the same time. The optical reactivity has been used to improve the memory switching characteristics of the amorphous $As_2Se_3$-based ReRAM. This study focuses on the formation of holographic lattices patterns in the amorphous $As_2Se_3$ thin film for straight conductive channel. The optical parameters of amorphous $As_2Se_3$ thin film which is a refractive index and extinction coefficient was taken by n&k thin film analyzer. He-Cd laser (wavelength: 325 nm) was selected based on these basic optical parameters. The straighten conduction channel was formed by holographic lithography method using He-Cd laser.$ Ag^+$ ions that photo-diffused periodically by holographic lithography method will be the role of straight channel patterns. The fabricated ReRAM operated more less voltage and indicated better reliability.

A ferroelectric $(Bi,La)_4Ti_3O_{12}$ (BLT) thin film fabricated by the pulsed-DC sputtering method was evaluated on a cell structure to check its compatibility to high density ferroelectric random access memory (FeRAM) devices. The BLT composition in the sputtering target was $Bi_{4.8}La_{1.0}Ti_{3.0}O_{12}$. Firstly, a BLT film was deposited on a buried Pt/$IrO_x$/Ir bottom electrode stack with W-plug connected to the transistor in a lower place. Then, the film was finally crystallized at $700^{\circ}C$ for 30 seconds in oxygen ambient. The annealed BLT layer was found to have randomly oriented and small ellipsoidal-shaped grains (long direction: ~100 nm, short direction: ~20 nm). The small and uniform-sized grains with random orientations were considered to be suitable for high density FeRAM devices.

As semiconductor devices are being scaled down, random variation becomes a critical issue, especially in the case of static random access memory (SRAM). Thus, there is an urgent need for statistical methodologies to analyze the impact of random variations on the SRAM. In this paper, we propose a novel sampling method based on the concept of a confidence ellipse. Results show that the proposed method estimates the SRAM margin metrics in high-sigma regimes more efficiently than the standard Monte Carlo (MC) method.