Earticle

Adding dummy metal is essential to secure a stable process for semiconductors. However, the dummy metal affects the RF characteristics so that the required characteristics are not obtained, so a design to prepare for them is required. In particular, the dummy metal around the inductor that determines the RF characteristics is a factor that prevents the characteristics of devices using the inductor. This paper aims to present a stable dummy metal implementation around an inductor that is essential by examining the characteristics of the inductor by analyzing the change of inductance due to the leakage current and parasitic capacity influencing the dummy metal structure. If the previous studies focused on the layer below the layer where the inductor is implemented, this paper analyzed and presented the dummy metal structure around the inductor. In the analysis, it was judged based on the inductance and quality-factor values of the inductor.

본 논문에서는 2개의 MOSFET으로 구성된 Half-bridge 회로를 구동할 때, 각 MOSFET의 기생성분을 고려하여 게이트 신호를 분석한다. 특히 MOSFET 구동시 게이트 전압에 따른 구간별 등가회로를 구성, 각 구간에서 다른 MOSFET에 상호적으로 미치는 영향을 수식적으로 분석하고, 시뮬레이션을 통해 스위칭 특성을 검증한다.