Earticle

This paper describes the development of on the machine measuring(OMM) system which can directlry measure the three dimensional machined dimensilnal accuracy using scanning probe in milling machine. Two algolithms, continuous path(CP) measurement using UC program and CAD data assisted point to point(PTP) measurement, were developed regarding specification of scanning probe. The OMM system was contructed to verify the developed system suing the proposed algorithm, and actually measured three kinds of machined TV shadow mask molds. The developed system was evaluated it's repeatability and compared with the current measurement system of CMM(Coording Measuring Machine) in terms of relative accuracy and time reduction and productivity increase.

We report a simple, low cost, and reliable method for assembling a multi-walled nanotube (MWNT) to the end of a metal coated scanning probe microscopy (SPM) tip. By dropping the MWNT solution and applying an electric field between an SPM tip and an electrode, MWNTs which were dispersed into a dielectric solution were directly assembled onto the apex of the SPM tip due to the attraction by the dielectrophoretic force. The effective measurement of a MWNT -attached SPM tip was demonstrated by direct comparison with AFM images of a standard sample with a bare AFM tip.

We studied the distribution of the current density and its magnetic-field dependence in GdBCO coated conductors with AC bias currents using low temperature scanning Hall probe microscopy. We selectively measured magnetic field profiles from AC signal obtained by Lock-in technique and calculated current distributions by inversion calculation. In order to confirm the AC measurement results, we applied DC current corresponding to RMS value of AC current and compared distribution of AC and DC transport current. We carried out the same measurements at various external DC magnetic fields, and investigated field dependence of AC current distribution. We notice that the AC current distribution unaffected by external magnetic fields and preserved their own path on the contrary to DC current.

This paper describes a method for digitizing the compound surfaces which are comprised of several unknown feature shapes such as base surface, and draft wall. From the reverse engineering's point of view, the main step is to digitize or gather three-dimensional points on an object rapidly and precisely. As well known, the non-contact digitizing apparatus using a laser or structured light can rapidly obtain a great bulk of digitized points, while the touch or scanning probe gives higher accuracy by directly contacting its stylus onto the part surface. By combining those two methods, unknown features can be digitized efficiently. The paper proposes a digitizing methodology using the approximated surface model obtained from laser-scanned data, followed by the use of a scanning probe. Each surface boundary curve and the confining area is investigated to select the most suitable digitizing path topology, which is similar to generating NC tool-paths. The methodology was tested with a simple physical model whose shape is comprised of a base surface, draft walls and cavity volumes.

In this work, a new non-photolithographic micro-fabrication technique is presented. The motivation of this work is to overcome the demerits of the most commonly used photolithographic techniques. The micro-fabrication technique presented in this work is a two-step process which consists of mechanical scribing followed by chemical etching. This method has many advantages over other micro-fabrication techniques since it is simple, cost-effective, rapid, and flexible. Also, the technique can be used to obtain a metal structure which has sub-micrometer width patterns. In this paper, the concept of this method and its application to microsystem technology are described.

The storing ability of information of optical disks directly depends on the physical property of recording unit cells. It means that the degradation of optical disks ultimately causes the loss of the physical and chemical properties of recording unit cells and leads also information, too. We investigated the degradation and life time of optical disks which tell us the longevity of the preservation of information. Optical disks were aged using the accelerated aging system and studied by optical reflectivity spectroscopy and atomic force microscopy(AFM), and the preservation environment of electronic media in National central library of Korea also were analysed. Results show that the double reflective coated optical disks have good preservation of recording information but revealed some deformation of dye area in the AFM images. It means that we should include the mechanical and chemical degradation of the optical disks in the life time expectation evaluation.

Atomic Force Microscopes(AFM) is used to scan surfaces of a sample by measuring the interaction between atoms on the sample and the extremely sharp probe tip, which is produced by micromachining. AFM can be used as an inspection equipment for microelectronics industry and also requires a vibration-free environment to provide its proper functions. However, all of machine foundations including the wafer fab floor show the great amount of floor vibrations which can cause bad effects on the AFMs. This paper deals with the permissible floor vibration level for AFM at a given resolution.

본 연구에서는 scanning probe microscopy(SPM)을 이용하여 국소영역에서 silicon nanocrystal(Si NC)의 전기적 특성을 분석하였다. Si NCs은 압축된 silicon powder를 laser로 분해하는 laser ablation 방식으로 제조되었고, sharpening oxidation 과정을 통하여 Si NC 주변에 oxide shell을 형성시켰다. 이 과정에서 Si NCs은 $10{\sim}50 nm$의 크기와 약 $10^{11}/cm^2$의 밀도로 $SiO_2$층에 증착되었다. SPM의 conducting tip을 통하여 전하는 각각의 Si NC로 주입되게 되고, 이로 인하여 발생하는 SCM image와 dC/dV curve의 변화를 통하여 Si NC에서 전하 거동을 모니터 하였다. 또한 국소영역에서 Si NC의 전기적 특성을 MOS capacitor 구조에서의 C-V 특성과 비교 분석하였다.

본 연구에서는 Scanning Capacitance Microscopy (SCM)와 Electrostatic Force Microscopy (EFM)을 이용하여 국소영역에서 실리콘나노 크리스탈의 전기적 특성을 분석하였다. 실리콘 나노 크리스탈은 에어로솔 방식으로 P-type 실리콘웨이퍼 위에 $10{\sim}40\;nm$의 크기와 약 $10^{11}/cm^2$의 밀도를 갖도록 제작하였다. 실리콘 나노 크리스탈에서 전자와 정공의 trapping 현상은 EFM, SCM 이미지를 통하여 관찰하였고 이러한 나노 크리스탈의 국소영역 특성을 MOS 캐패시터 구조의 C-V 특성을 비교 분석하였다. 또한, 나노 크리스탈에 trapping된 전하의 detrapping 과정을 스트레스 조건에 따라 분석하였다.

In this paper, the nano-grating was measured by Scanning Probe Microscopy (SPM) system using digital Proportion, Integration and Derivative (PID) control. Through this measurement, we could confirm the improvement of the vertical resolution compared with analog Proportion and Integration (PI) control method.

Atomic Force Microscopy (AFM)방식을 이용한 Scanning probe Data Storage (SDS) 시스템은 array cantilever 를 이용하여 나노 단위로 데이터 읽기, 쓰기를 하는 시스템이다. 따라서 미디어가 있는 stage 의 x 축과 y 축 및 두 축간 coupling 을 고려한 제어기 설계가 요구된다. 본 논문은 SDS 시스템의 축간 coupling 을 고려하지 않은 기존의 제안된 LQG 에 PI 를 추가한 제어기 구조를 사용한다. 두 축간 coupling 공진의 영향을 최소화 하기 위해 convex optimization 으로 설계된 최적의 position profile를 기준 입력신호로 사용한다. 제안된 제어기를 SDS 시스템에 적용하여 모의실험을 하고 그 결과 position profile 로 인해 각 축간 coupling 공진 영향이 감소하여 tracking performance 가 기존의 LQG 제어기 보다 향상된 것을 확인한다.

We measured the field profiles, H(x)'s of coated conductors by using scanning Hall probe method when various magnetic fields, $H{_\alpha}'s$ or currents, I's were applied. From the measured field profiles, we calculated the current profiles, J(x)'s by the inversion method. The calculated J(x)'s of coated conductors show some different properties from the standard critical state model. $J{_c}'s$ are inhomogeneous varying with the positions and are not constant when $H_{\alpha}$ or I changes. And when I decreases the features of current reversion are remarkably different from the model.

The magnetic flux profiles in SmBCO and YBCO coated conductors(CC) in the presence of the external field were comparatively investigated by magneto-optic image and scanning hall probe measurements. The current distributions calculated by using the inversion method from measured field profiles show that the decrease of current densities near the edges of SmBCO CC is more significant than those of YBCO CC. Through the comparison of the numerical analysis based on Kim's critical state model and the Brandt and Indenbom's solution, we found that this feature is related to their different field dependant properties of the critical current densities.

Si nanocrystal (Si NC) memory device has several advantages such as better retention, lower operating voltage, reduced punch-through and consequently a smaller cell area, suppressed leakage current. However, the physical and electrical reasons for this behavior are not completely understood but could be related to interface states of Si NCs. In order to find out this effect, we characterized electrical properties of Si NCs embedded in a SiO$_{2}$ layer by scanning probe microscopy (SPM). The Si NCs were generated by the laser ablation method with compressed Si powder and followed by a sharpening oxidation. In this step Si NCs are capped with a thin oxide layer with the thickness of 1$\~$2 nm for isolation and the size control. The size of 51 NCs is in the range of 10$\~$50 m and the density around 10$^{11}$/cm$^{2}$ It also affects the interface states of Si NCs, resulting in the change of electrical properties. Using a conducting tip, the charge was injected directly into each Si NC, and the image contrast change and dC/dV curve shift due to the trapped charges were monitored. The results were compared with C-V characteristics of the conventional MOS capacitor structure.

The SPM could image the most detailed microstructure of a sample in a wet and dry state by measuring the interaction between the atoms on the sample surface and the extremely sharp probe tip. The refined fibre exhibited large wrinkles formed by fibrillar bundles, the disintegrated fibres extensively showed “scale-like features”. By using the Non-Contact Atomic Force Microscopy (NC-AFM) and Contact Atomic Force Microscopy (C-AFM) including Phase Detection Microscopy (PDM) and Force Modulation Microscopy (FMM), it was possible to investigate surface topography, surface roughness and mechanical property (hardness or visco-elasticity) of fibre surface in detail. The PDM and FMM images showed that the disintegrated only fibre displayed uniform mechanical properties, whereas the refined one did not. The surface roughness of pulp fibres was higher in refined fibres than in disintegrated fibres due to the presence of external fibrils. These SPM images would be used to provide visual evidence of morphological change of a single fibre created during mechanical treatments such as refining, drying, calendering and so on.

Scanning probe microscopes (SPMs) such as the scanning tunneling microscope (STM) and the atomic force microscope (AFM) were used for surface modification tools at the nanometer scale. Material surfaces, i. e., titanium, hydrogen-terminated silicon and trimethylsilyl organosilane monolayer on silicon, were locally oxidized with the best lateral spatial resolution of 20nm. The principle behind this proximal probe oxidation method is scanning probe anodization, that is, the SPM tip-sample junction connected through a water column acting as a minute electrochemical cell. An SPM-nanolithogrphy process was demonstrated using the organosilane monolayer as a resist. Area-selective chemical modifications, i. e., etching, electroless plating with gold, monolayer deposition and immobilization of latex nanoparticles; were achieved in nano-scale resolution. The area-selectivity was based on the differences in chemical properties between the SPM-modified and unmodified regions.

기계가공 생산시스템에서 대량생산라인의 경우에는 측정 및 검사공정을 별도로 두고 있으나, 금형과 같은 다품종 소량 생산품의 경우에는 이러한 방식이 적합하지않다. 이러한 경우에는 유연성이 높은 3차원 측정기(CMM)를 설치하여 운용하고 있으나 운용비용이 많이 들고 관리하기가 쉽지 않으며 Setup 및 측정시간이 길어져 비경제적일 수가 있다. 또한 3차원 측정기의 한정된 크기때문에 대형가공물이라든지 탈착이 어려운 생산품의 경우에는 마땅한 특정 방법이 없는 실정이다. 본 연구에서는 개발된 OMM 시스템을 3종류의 TV Shadow Mask 금형의 측정에 적용한 결과를 소개한다. 측정된 결과는 CMM을 이용해 측정한 결과와 비교 했고, 비교된 결과를 이용해 개발된 시스템의 반복정밀도, 측정 정확도를 통계적 방법으로그리고 경제적 관점에서 CMM을 이용 한 기존의 방법과 개발된 시스템을 비교 평가했다.