Earticle

초록

영어

In this paper, a simple non-linear analytical charge control model for the DC and microwave characteristics of AlGaN/GaN MODFET is presented. The effect of parasitic resistances
Rs and Rd is also incorporated. The model has also been extended to obtain the expressions for transconductance, drain conductance and cut-off frequency of the device. The model predicts a high transconductance of 502.6mA/mm at 1Vof gate bias and a maximum cut-off frequency of 22.5GHz for a 50nm device gate length, which is important in realizing the device for microwave applications. The extrinsic and intrinsic characteristics show close agreement with the published results proving the validity of the model.

목차

Abstract
 1. Introduction
 2. Model Formulation
  2.1. Intrinsic Characteristics
  2.2. Extrinsic Characteristics
 3. Capacitance-Voltage Characteristics
  3.1. Gate-Drain Capacitance
  3.2. Gate-Source Capacitance
 4. Cut-off Frequency
 5. Results and Discussion
 6. Conclusion
 References

키워드

저자

• Ramnish [ Department of Electronics and Communication Engineering, Guru Jambheshwar University of Science and Technology, Hisar, Haryana, India ]
• Sandeep K Arya [ Department of Electronics and Communication Engineering, Guru Jambheshwar University of Science and Technology, Hisar, Haryana, India ]
• Anil Ahlawat [ Department of Computer Science Engineering, Krishna Institute of Engineering and Technology, Ghaziabad, U.P., India ]

참고문헌

발행기관

간행물

표지보기 관심저널 등록

• 간행물명

  International Journal of Advanced Science and Technology

• 간기

  월간

• pISSN

  2005-4238

• 수록기간

  2008~2016

• 십진분류

  KDC 505 DDC 605