Earticle

Thick Cadmium zinc telluride epitaxial films were grown on (100)GaAs substrate by Close-Spaced Sublimation. The growthrate was around 1 μm/min. SEM observations and XRD θ-2θ scan and ф scan revealed well-defined epitaxial features ofthe films. The films were found to be polycrystalline at the early stage of growth. As growth progressed, the films graduallybecame oriented until an epitaxial layer was formed. The polycrystalline to monocrystalline transition was achieved bypreferential lateral growth of the grains and with the aid of migration of atoms in the film. This growth mode differs fromthe well-established epitaxy where a suitable lattice fit is expected from the early stages of film growth. This mode can betterguide the growth mode of CZT thick films, and can grow large volume and high-quality thick films. High quality thick filmscan be better applied in fields such as solar cells, infrared and ultraviolet detection, and X-ray detection.