Earticle

Simplification of the buffer architecture in the fabrication of coated conductors is required because the deposition of multi-layers leads to a longer production time and a higher cost of coated conductors. In this study, a single layered buffer deposition of CeO2 for low cost coated conductors has been tried using thennal evaporation technique. 100nm-thick CeO2 layers deposited by thermal evaporation were found to act as a diffusion layer. 0.4㎛-thick SmBCO superconducting layers were deposited by thermal co-evaporation on the CeO2 buffered Ni-W substrate. Critical current of 55.4 A/cm2 was obtained for the SmBCO coated conductors.

This paper investigated structural and electrical properties of $Y_{2}O_3$ as a buffer layer of sin91r transistor FRAM (ferroelectric RAM). $Y_{2}O_3$ buffer layers were deposited at a low substrate temperature below 400$^{\circ}C$ and then RTA (rapid thermal anneal) treated. Investigated parameters are substrate temperature, $O_2$ partial pressure, post- annealing temperature, and suppression of interfacial $SiO_2$ layer generation. for a well-fabricated sample, we achieved that leakage current density ($J_{leak}$) in the order of $10^{-7}A/cm2$, breakdown electric field ($E_{br}$) about 2 MV/cm for $Y_{2}O_3$ film. Capacitance versus voltage analysis illustrated dielectric constants of 7.47. We successfully achieved an interface state density of $Y_{2}O_3$/Si as low as $8.72{\times}10^{10}cm^{-2}eV^{-1}$. The low interface states were obtained from very low lattice mismatch less than 1.75%.