Earticle

A small size cartrideg for FET type electrolyte sensor is designed and faricated with much simplified process by using micromachining tenchiques such as silicon etching andglass bonding. Size of the whole cartideg is 2.4cm*2.5cm, and the dead volume of a micro flow-channel in the cartrideg is only 8.5.mu.l. The photosensitive polymer(THB 30) is used to define a micropool and to encapsulate the sensor surface for standardizationof electrolyte sensors. To miniaturize micro flow-channel conventional reference electrode(Ag/AgCl) a differential amplification is introduced using REFET and quasi reference electrode. Refet was fabricated using photosensitive polymer(OMR 83). The fabricated cartridge with built-in pH-ISFET showed good operational characteristics such as linearity and high sensitivity (55.4mV/pH) in a wide pH range(pH2-pH12).

Microsensor nodes is energy limited in sensor networks. If nodes had been stop in working, sensor network can't acquire sensing data in that area as well as routing path though the sensor can't be available. So, it's important to maximize the life of network in sensor network. In this paper, we look at communication protocol, which is modified by LEACH(Low-Energy Adaptive Clustering Hierarchy). We extend LEACH's stochastic cluster-head selection algorithm by a Position-based Selection (PB-Leach). This method is that the sink divides the topology into several areas and cluster head is only one in an area. PB-Leach can prevent that the variance of the number of Cluster-Head is large and Cluster-Heads are concentrated in specific area. Simulation results show that PB-Leach performs better than leach by about 100 to $250\%.$

It is well-known that rectangular bulk-Si sensors prepared by etch or epi etch-stop micromachining technology are already in practical use today, but the conventional bulk-Si sensor shows some drawbacks such as large chip size and limited applications as silicon sensor device is to be miniaturized. We consider a circular-shape SOI(Silicon-On-Insulator) micro-cavity technology to facilitate multiple sensors on very small chip, to make device easier to package than conventional sensor like pressure sensor and to provide very high over-pressure capability. This paper demonstrates the cross-functional results for stress analyses(targeting $5{\mu}m$ deflection and 100MPa stress as maximum at various applicable pressure ranges), for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from two-type SOI structures where the double SOI structure shows the most feasible deflection and small stress at various ambient pressures. Those results can be compared with the ones of circular-shape bulk-Si based sensor$^{[17]}. The SOI micro-cavity formed the sensors is promising to integrate with calibration, gain stage and controller unit plus high current/high voltage CMOS drivers onto monolithic chip.