Earticle

An approximation of the Fourier Sine Transform via Gr$\ddot{u}$ss, Chebychev and Lupa？ integral inequalities and application for an electrical curcuit containing an inductance L, a condenser of capacity C and a source of electromotive force $E_0P$(t), where P (t) is an $L_2$-integrable function, are given.

본 논문에서는 넓은 입력 전압 범위에 걸쳐 좋은 선형성을 보여주는 가변 트랜스컨덕터를 제안한다. 제안된 트랜스컨덕터는 선형 영역에서 동작하는 입력 MOS 트랜지스터를 사용하여 회로의 구성이 간단하고 좋은 가변성을 갖고 6.8V/sub p-p/의 넓은 입력범위를 갖는다. 또한 소오스-결합 차동쌍을 이용하여 실질적인 차동입력을 제공하고 정과 부의 트랜스컨덕턴스 값을 제공한다. 제안된 회로는 1.2㎛ single poly double metal n-well CMOS 공정을 사용하여 제작되었다. 제안된 회로의 THD 특성은 V/sub DD/=-V/sub ss/=5V, I/sub B/=20, 40μA이고 입력 신호 주파수가 1KHz일 때 6V/sub p-p/의 차동 입력전압에 대해 1% 미만임을 보여준다.

In this paper, tunable transconductor shows good linearity over a wide input voltage range are proposed. The proposed transconductor employ operating in the nonsaturation(ie., linear) region to improve circuit simplicity and tunability and 6.8V$\_$p-p/ wide input range. Also the circuit employ source-coupled differential pair to provide true differential input and can achieve both positive and negative transconductance values. The proposed circuits are implemented using a 1.2 $\mu\textrm{m}$ single poly double metal n-well CMOS technology. The THD characteristic of proposed circuit is less than 1% for a differential input voltage of up to 6V$\^$p-p/ when supply bias condition is V$\_$DD/=-V$\_$ss/=5V, I$\_$B/=20, 40${\mu}$A, and frequency of input signal is 1KHz.

We report the development of full-field swept-source optical coherence tomography (SS-OCT) in the wavelength range of 815-870 nm using a unique combination of super-luminescent diode (SLD) as broad-band light source and acousto-optic tunable filter (AOTF) as a frequency-scanning device. Some new applications of full-field SS-OCT in forensic sciences and engineering materials have been demonstrated. Results of simultaneous topography and tomography of latent fingerprints, silicon microelectronic circuits and composite materials are presented. The main advantages of the present system are completely non-mechanical scanning, wide-field, compact and low-cost.

주파수 도약 대역확산시스템에서의 광대역 주파수 도약을 위해 주파수 합성기가 널리 이용된다. 이와 같은 주파수 도약 대역확산 송수신기에서의 도약 주파수를 발생시키는 주파수 합성기는 PLL에 의해 실현된다. 따라서 논문에서는 정교한 반송파 발생, 수신기에서의 반송파동기 등을 위해 널리 이용되는 디지털 위상고정루프를 설계하고 결과를 분석하였다. 디지털 위상비교기, 루프필터, DCO 등 디지털 위상고정루프를 구성하는 기본 요소를 소개하였다. 또한 구현된 각 구성요소에 대한 시뮬레이션 결과와 특성들에 대한 분석이 이루어 졌다. 기준입력신호와 DCO의 출력신호의 위상차에 의한 특성을 분석하였다. 루프가 고정이 되었을 때 루프필터의 N값이 이웃하는 값 사이에서 토글되는 현상을 나타내며 이는 출력신호에 위상 지터를 초래한다. 이는 DCO의 클럭인 fc를 증가시키므로 해결이 가능하다.

In this paper, Frequency Synthesizer which is widely used for FH-SS system is proposed and the experimental results are analyzed. The performance of the DPLL(Digital Phase-Locked-Loop), which is the main part of the Synthesizer is analyzed by the computer program. Using Maxplus-II tool provided by altera. co., ltd, each part of the DPLL is designed and all of them is integrated into EPM7064SLC44-10 chip. And the simulation results are compared with the characteristics of the implemented circuits for analysis. And the experiential results show that the N value of the loop filter is toggled to adjacent N value, which result in phase jitter of the output. It can be resolved by increasing DCO(Digital Controlled oscillator) clock rate.

본 논문에서는 주파수 도약 대역확산시스템에서 널리 적용되는 FSK복조기를 설계하고 실험 결과를 분석하였다. FSK 복조회로에 있어서 가장 중요한 부분인 ADPLL의 성능을 소프트웨어를 이용하여 분석하였다. 이 분석을 토대로 Altera사에서 제공하는 Maxplus-II 툴을 이용하여 각 구성 회로를 설계하였으며 EPM7064SLC44-10 chip으로 집적화 하였다. 시뮬레이션 결과와 구현된 회로의 특성을 비교 분석하였다. 결과에 있어서 PLL의 시상수는 약 2${\mu}\textrm{s}$의 차이가 발생하였다. 이 차이는 FSK복조회로에 있어서는 큰 영향을 주지 않는다. 실험결과를 보면 FSK 변조된 신호는 기준 신호와 위상 차가 180$^{\circ}$인 경우에도 설계된 회로에 의해 잘 복조 됨을 관찰할 수 있었다.

In this paper, FSK(Frequency Shift Keying) demodulator which is widely used for FH-SS system is designed and the experimental results are analyzed. The performance of the ADPLL(All-digital Phase-Locked-Loop), which is the main part of the demodulator circuit, is analyzed by the computer program. Using Maxplus-II tool provided by altera. co., ltd, each part of the ADPLL is designed and all of them is integrated into EPM7064SLC44-10 chip. And the simulation results are compared with the characteristics of the implemented circuits for analysis. There is about 2${\mu}\textrm{s}$ difference in time constant of the PLL. This difference is not critical in the demodulator. And the experimental results show that the transmitted data is well demodulated when the phase difference between the FSK modulated signal and the reference signal is about 180 degree.

In this work, a tunneling field-effect transistor (TFET) based on heterojunctions of compound and Group IV semiconductors is introduced and simulated. TFETs based on either silicon or compound semiconductors have been intensively researched due to their merits of robustness against short channel effects (SCEs) and excellent subthreshold swing (SS) characteristics. However, silicon TFETs have the drawback of low on-current and compound ones are difficult to integrate with silicon CMOS circuits. In order to combine the high tunneling efficiency of narrow bandgap material TFETs and the high mobility of III-V TFETs, a Type-I heterojunction tunneling field-effect transistor (I-HTFET) adopting $Ge-Al_xGa_{1-x}As-Ge$ system has been optimized by simulation in terms of aluminum (Al) composition. To maximize device performance, we considered a nanowire structure, and it was shown that high performance (HP) logic technology can be achieved by the proposed device. The optimum Al composition turned out to be around 20% (x=0.2).

This paper presents a low-power single-slope analog-to-digital converter (SS-ADC) that uses two comparators of the same structure to predict when a comparator flips. One of the comparators, a replica comparator, uses only half the bias current compared to the main comparator, causing the output of the comparator to flip early. By predicting the flipping time of the comparator in advance, power-gating techniques can be applied, resulting in reduced dynamic power consumption. The proposed 11-bit SS-ADC is fabricated using a 28-nm standard process, considering a resolution of 320 × 240 and an operating frame rate of 133 frames per second. Measurement results demonstrate that the power consumption of the proposed SS-ADC has decreased by approximately 17.6%. The total power consumption per column is 4.8 μW, and the figure of merit is 76.4 fJ/conversion step.