Earticle

초록

영어

In semiconductor memory, the kinds of voltage generator are high voltage generator, negative voltage generator, drain voltage generator and etc. The relevant circuits supported voltage generator, are clock generator, sense amplifier, voltage regulator and etc. The voltage generator consists of MOS diodes and MOS capacitors. To get the out voltage with sufficient charge, the MOS capacitors are big size. These MOS transistors can be adapted only on the EEPROM process.
Thus, in this paper, we designed stacked metal capacitor. This capacitor is small size but can get much capacitance. This capacitor is designed to comb type using metal-line and poly-line. The size of designed capacitor is 208×52㎛2 and the capacitance is about 4㎊. The stacked metal capacitor can get much capacitance of 5～6 times than single plane capacitor. Also this capacitor will be easy adapted in sub-micro process technology of semiconductor memory. And this capacitor can be adapted on all memory process.

목차

Abstract
 1. Introduction
 2. Voltage generator composition
 3. Capacitor design
 4. Result and ancient temple
 5. Conclusion
 Reference

키워드

저자

• 조명현 [ M. H. CHO | 서일대학 정보기술계열 ]
• 이명언 [ M. U. LEE | 서일대학 정보기술계열 ]

참고문헌

발행기관

간행물

표지보기 관심저널 등록

• 간행물명

  한국기계항공기술학회지(구 한국기계기술학회지) [Journal of the Korean Society of Mechanical and Aviation Technology ]

• 간기

  격월간

• pISSN

  1229-604X

• eISSN

  2508-3805

• 수록기간

  1999~2026

• 등재여부

  KCI 등재

• 십진분류

  KDC 550 DDC 620