Soon-Gil Jung, Jeongwon Noh, Yoonseok Han, Woo Seok Choi, Won Nam Kang, Tuson Park
언어
영어(ENG)
URL
https://www.earticle.net/Article/A457860
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초록
한국어
We fabricate high-entropy alloy (HEA) Ta1/6Nb2/6Hf1/6Zr1/6Ti1/6 superconducting (SC) thin films via a pulsed laser deposition method. Two targets are prepared using arc melting, each followed by sintering at different temperatures: 550°C and 700°C for 12 hours. The films, HEA550 and HEA700, are deposited on c-cut Al2O3 substrates at a substrate temperature of 520°C, using the targets sintered at 550°C and 700°C, respectively. The SC transition temperature (Tc) of HEA700 is 6.88 K, slightly higher than that of HEA550 (= 6.27 K). Both films exhibit similar upper critical field (Hc2) at 0 K, with 11.34 T for HEA550 and 11.40 T for HEA700. Notably, HEA700 exhibits a large critical current density (Jc) of approximately 4.4 MA/cm2 and 3.5 MA/cm2 at 2.0 K and 4.2 K, respectively, accompanying by a predominance of normal point pinning. These results indicate that the targets prepared by arc melting are beneficial for achieving a large Jc in HEA SC thin films, thus providing new avenues for improving SC critical properties of HEA thin films for their practical applications.
high-entropy alloy superconductorsuperconducting thin filmcritical current densitypulsed laser deposition
저자
Soon-Gil Jung [ Department of Physics Education, Sunchon National University, Suncheon 57922, Korea ]
Corresponding Author
Jeongwon Noh [ Department of Physics, Sungkyunkwan University, Suwon 16419, Korea ]
Yoonseok Han [ Department of Physics, Sungkyunkwan University, Suwon 16419, Korea ]
Woo Seok Choi [ Department of Physics, Sungkyunkwan University, Suwon 16419, Korea ]
Won Nam Kang [ Department of Physics, Sungkyunkwan University, Suwon 16419, Korea ]
Tuson Park [ Department of Physics, Sungkyunkwan University, Center for Quantum Materials and Superconductivity (CQMS), Sungkyunkwan University, Suwon 16419, Korea ]