Elmeri Rivasto, Jihyun Kim, Le Minh Tien, Ji-Hoon Kang, Sungmin Park, Woo Seok Choi, Won Nam Kang, Tuson Park
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https://www.earticle.net/Article/A404554
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We developed an optimization process of the pulsed laser deposition method to grow epitaxial CeCoIn5 thin films on MgF2 substrates. The effects of different deposition parameters on film growth were extensively studied by analyzing the measured Xray diffraction patterns. All the deposited films contained small amounts of CeIn3 impurity phase and misoriented CeCoIn5, for which the c-axis of the unit cell is perpendicular to the normal vector of the substrate surface. The deposition temperature, target composition, laser energy density, and repetition rate were found effective in the formation of (00l)-oriented CeCoIn5 as well as the undesired phases such as CeIn3, misoriented CeCoIn5 along the (112) and (h00). Our results provide a set of deposition parameters that produce high-quality epitaxial CeCoIn5 thin films with sufficiently low amounts of impurity phases and can serve as a reference for future studies to optimize the deposition process further.
Elmeri Rivasto [ Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, 20014 Turku, Finland, University of Turku Graduate School (UTUGS), University of Turku, 20014 Turku, Finland ]
Jihyun Kim [ Institute of Basic Science, Sungkyunkwan University, Suwon 16419, South Korea ]
Le Minh Tien [ Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea ]
Ji-Hoon Kang [ Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea ]
Sungmin Park [ Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea ]
Woo Seok Choi [ Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea ]
Won Nam Kang [ Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea ]
Tuson Park [ Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea ]
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