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We have investigated the effect of Y2O3 nanoparticles on the pinning properties of Y2O3-doped GdBa2Cu3O7-δ (GdBCO) films. Both undoped and Y2O3-doped GdBCO films were grown on CeO2-buffered MgO (100) single crystal substrates by pulsed laser deposition (PLD) using KrF (λ=248 nm) laser. The Y2O3 doping contents were controlled up to ~ 2.5 area% by varying the internal angles of Y2O3 sectors put on the top surface of GdBCO target. Compared with the Gd2O3-doped GdBCO films previously reported by our group [1], the Y2O3-doped GdBCO films exhibited less severe critical temperature (Tc) drop and thus slightly enhanced critical current densities (Jc) and pinning force densities (Fp) at 65 K for the applied field parallel to the c-axis of the GdBCO matrix (B//c) with increasing the doping content. Below 40 K, the in-field Jc and Fp values of all Y2O3-doped GdBCO films exhibited higher than those of undoped GdBCO film, suggesting that Y2O3 inclusions might act as effective pinning centers.
Won-Jae Oh [ Department of Materials Science & Engineering, and Research Institute of Advanced materials (RIAM), Seoul National University, Seoul, Korea ]
Insung Park [ Department of Materials Science & Engineering, and Research Institute of Advanced materials (RIAM), Seoul National University, Seoul, Korea ]
Sang-Im Yoo [ Department of Materials Science & Engineering, and Research Institute of Advanced materials (RIAM), Seoul National University, Seoul, Korea ]
Corresponding Author