Earticle

초록

영어

In this paper we focused on mathematical formulation for capacitive pressure sensor. The most important parameter of every sensor are deflection on the application of applied pressure, variation of capacitance on deflection and sensitivity. Here we mathematically drive equation for every parameter. This article help researcher to develop MEMS based capacitive pressure sensor for particular application. For that purpose we also vary the thickness of sensing diaphragm. Our study in this article is mainly consider only case of pressure sensor in normal mode. Mostly researcher use FEM method for design and simulation of capacitive pressure sensor but using these equation they can easily design any sensor by changing the parameter of equation. The material for diaphragm is Si and for insulation layer is SiO₂ is taken in this article.

목차

Abstract
 1. Introduction
 2. Theory of Capacitive Pressure Sensor
 3. Result and Discussion
 4. Conclusion
 References

키워드

저자

• Sandeep Thakur [ Department of Electronics and Telecommunication Engineering, MGMCET Kamothe, India ]
• Abishek Naithani [ Department of Electrical Engineering, IIT(ISM Dhanbad), India ]

참고문헌

발행기관

간행물

표지보기 관심저널 등록

• 간행물명

  International Journal of Hybrid Information Technology

• 간기

  격월간

• pISSN

  1738-9968

• 수록기간

  2008~2016

• 십진분류

  KDC 505 DDC 605