※ 기관로그인 시 무료 이용이 가능합니다.
※ 학술발표대회집, 워크숍 자료집 중 4페이지 이내 논문은 '요약'만 제공되는 경우가 있으니, 구매 전에 간행물명, 페이지 수 확인 부탁 드립니다.
4,000원
원문정보
초록
영어
Graphene could be damaged and contain impurities on its surface while several fabrications such as deposition, etching, and patterning because one needs photoresist masking operation to divide the section for deposition or not. In this paper, we investigated the effectiveness of selective atomic layer deposition for clean graphene surface. Atomic layer deposition (ALD) has strong point at very uniform conformity of 1 rms roughness. In this process, H2O is generally used by one of precursors. This H2O precursor make deposition of ALD on hydrophilic surface not hydrophobic. Therefore, we used this property at graphene which has hydrophobic surface. And then, we analyzed selective deposition of ALD on graphene which are grown on Cu foil and transferred by wet process not cleaved from HOPG.
목차
Abstract 1. 서론 2. 기존 선택적 원자층 증착의 문제점 3. 실험 및 결과 3.1 원자층 증착 검증 3.2 선택적 원자층 증착 검증 4. 결론 References