Earticle

초록

영어

A three-dimensional and time-dependent turbulent mathematical model is established for the mass, heat, momentum and dopant transport in the LEC melt of In-doped GaAs. The Solution scheme for the dopant segregation effect at the melt/crystal interface is put forward. Grid testing calculations have been performed for the choice of the grid. The turbulent mathematical model and numerical methodology are used to simulate the melt convections and dopant transports in the previously published experiments, and the numerical accuracy is validated by comparing the results with the experimental data in different model setups. Some transport characteristics in the LEC melt of In-doped GaAs have been concluded. Owing to the interacting forces associated with different length scales in the LEC melt, the fluid flow is non-axisymmetric. Because of the competition between buoyancy, Marangoni force, centrifugal force and the Coriolis force, the temperature fluctuates in the melt. Due to the segregation, the InAs concentration increase in the axial direction.

목차

Abstract
 1. Introduction
 2. Physical and Mathematical Model
  2.1 Physical Model
  2.2 Governing Equations and Turbulence Models
  2.3 Solution Scheme for Segregation at the Melt/Crystal Interface
  2.4 Boundary Conditions
 3. Numerical Methodology
  3.1 Finite Volume Method
  3.2 Grid Testing Calculations
 4. Results and Discussion
  4.1 Modeling of the Mass, Heat and Momentum Transport Characteristics
  4.2 Modeling of the Dopant Transport in the In-Doped LEC Gaas Melt
 5. Conclusion
 References

키워드

저자

• Shuxian Chen [ Aviation Engineering Institute, Civil Aviation Flight University of China, Guanghan, 618307, China, Jiangsu Province Key Laboratory of Aerospace Power Systems, Nanjing ] Corresponding Author
• Shilin Li [ Aviation Engineering Institute, Civil Aviation Flight University of China, Guanghan, 618307, China ]
• Xiaoming Tan [ Jiangsu Province Key Laboratory of Aerospace Power Systems, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China ]

참고문헌

발행기관

간행물

표지보기 관심저널 등록

• 간행물명

  International Journal of Multimedia and Ubiquitous Engineering

• 간기

  월간

• pISSN

  1975-0080

• 수록기간

  2008~2016

• 등재여부

  SCOPUS

• 십진분류

  KDC 505 DDC 605