Earticle

초록

영어

Titaniun di-oxide (TiO2) hasmany excellent physical properties such as high dielectric constant a strong mechanical and chemical stability. Tio2 has high refractive index and good insulating properties, as a result it is widely used as protective layer for very large scale integrated(VLSI)circuits and for manufacture of optical elements.Additionally TiO2 films have potential uses for a number of electroniuc device applications such as dye-sensitized photovoltaic celles as well as anti reflective (AR) coatings, gas sensore, electro chromic displays, and planar waveguides.
The nanomaterilas were characterized using x-ray diffraction,UV-visible reflectance spectroscopy.In this paper, we have discussed the groth of the High quality Titanium di oxide (tio2) material and study their optical and lectriacl properties.

목차

Abstract
 I. Introduction
 II. Thin Film Technology
 III. Experimental Details
 IV. Result s and Discussion:
  A. XRD Pattern of Pure Silicon (Si) Substrate
  B. XRD Pattern of Pure TargetTitanium-di-oxide (TiO2)
  C. XRD Pattern of TiO2 Thin films under oxygen pressure
  D. XRD Pattern of TiO2 Thin films without oxygen pressure
  E. Band Gap Measurement of TiO2 ThinFilm Deposited on Quartz Crystal (SiO2)
 V. Conclusions
 References

키워드

저자

• Sanjeet Kumar Shriwastava [ Department of Electronics and Communication Engineering, Laxmi Institute of Technology Post Bag No.15,Sarigam,District Valsad, Gujarat,India ]
• Sita Singh [ Department of Electrical Engineering, Laxmi Institute of Technology Post Bag No.15,Sarigam,DistrictValsad, Gujarat,India ]

참고문헌

발행기관

간행물

표지보기 관심저널 등록

• 간행물명

  International Journal of Hybrid Information Technology

• 간기

  격월간

• pISSN

  1738-9968

• 수록기간

  2008~2016

• 십진분류

  KDC 505 DDC 605