Earticle

초록

영어

Read stability and write ability, or SNM (static noise margin) in total, of a SRAM cell is the effective tool to determine the practicability of the cell. Leakage current, read speed and read stability are few of the constrained parameters desired for any practical SRAM cell. The aim of this paper is to analyze the read behaviour of the multiple SRAM cell structures using cadence tool at 45nm technology and to compare the cells for read operation while keeping the read and write access time and the supply voltage as low as possible. In particular, the leakage currents, leakage power and read behaviour of each SRAM cells are examined . A 10T SRAM cell implementation is proposed here that results in reduced leakage power and leakage current, at the same time with increased read stability in comparision with the conventional 6T SRAM cell as well as 7T, 8T and 9T SRAM cells. As a result, the 10T SRAM always consumes lowest leakage power and leakage current; improve read stability as compared to the 6T, 7T, 8T and 9T SRAM cells. This paper is aimed to reduce the leakage power, leakage current and improve the read behaviour of the different SRAM cell structures using cadence tool at 45nm technology while keeping the read and write access time and the power as low as possible.

목차

Abstract
 1. Introduction
 2. Proposed 10T SRAM Cell
 3. Power Consumption
 4. Simulation Results
 5. Conclusion
 References

키워드

저자

• PN Vamsi Kiran [ ITM Gwalior, India ]
• Nikhil Saxena [ Assistant Professor, Dept. of EC ITM Gwalior, India ]

참고문헌

발행기관

간행물

표지보기 관심저널 등록

• 간행물명

  International Journal of Hybrid Information Technology

• 간기

  격월간

• pISSN

  1738-9968

• 수록기간

  2008~2016

• 십진분류

  KDC 505 DDC 605