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The effect of annealing time in Metal Organic Deposition(M0D) method was investigated at reduced total pressure. As the total annealing pressure was reduced, the growth rate of YBCO films increased from 0.14nm/sec at atmospheric pressure to 4.2nm/sec at 1 Torr. For the total pressure of 700, 500, 300, 100, and lTorr, the optimal annealing times of 60, 40, 20, 10, 2minutes were found in our experimental conditions. When the annealing time was short, poor crystallinity or un-reacted phase was obtained. Also, the degradation of YBCO films occurred when exposed longer to the humid ambient at the high annealing temperature. The reduced pressure was found effective to increase the growth rate and to control the pore size of the YBCO films in MOD method. A fast growth of MOD-YBCO films was realized with high critical current density over 1MA/cm2 using reduced pressure annealing. Large pores, usually observed at atmospheric pressure in MOD method, disappeared and also, the number of pores was reduced