Earticle

초록

영어

There has been an increase of using Bosch Process to fabricate MEMS Device, TSV, Power chip for straight etching profile. Essentially, the interest of TSV technology is rapidly floated, accordingly the demand of Bosch Process is able to hold the prominent position for straight etching of Si or another wafers. Recently, the process to prevent under etching or over etching using EPD equipment is widely used for improvement of mechanical, electrical properties of devices. As an EPD device, the OES is widely used to find accurate end point of etching. However, it is difficult to maintain the light source from view port of chamber because of contamination caused by ion conflict and byproducts in the chamber. In this study, we adapted the SPOES to avoid lose of signal and detect less open ratio under 1 %. We use 12inch Si wafer and execute the through etching 500um of thickness. Furthermore, to get the clear EPD data, we developed an algorithm to only receive the etching part without deposition part. The results showed possible to find End Point of under 1 % of open ratio etching process.

목차

Abstract
 1. 서론
 2. 실험 준비
  2.1. 식각 장치 및 EPD 장치
  2.2. 시료 준비 및 식각 조건
  2.3. EPD 알고리즘
 3. 결과 및 고찰
 4. 결론
 5. References

키워드

저자

• 김재필 [ Kim Jae Pil | 기가레인 ]
• 황우진 [ WooJin Hwang | 기가레인 ]
• 신유식 [ Youshik Shin | 기가레인 ]
• 남진택 [ JinTaek Nam | 기가레인 ]
• 김홍민 [ Kim hong Min | 명지대학교 ]
• 김창은 [ Kim Chang-Eun | 명지대학교 ] Corresponding Author

참고문헌

발행기관

간행물

표지보기 관심저널 등록

• 간행물명

  대한안전경영과학회지 [Journal of Korea Safety Management & Science]

• 간기

  계간

• pISSN

  1229-6783

• eISSN

  2288-1484

• 수록기간

  1999~2025

• 십진분류

  KDC 530 DDC 620