Earticle

초록

영어

As compared to other types of flash memory, NAND flash memory is attracting attention as the next generation storage device for its low power use and fast access speed, which make it suitable for ubiquitous and mobile environment. In particular, flash memory is being used in storage devices in many fields, including the memory system of small mobile devices, as well as SSD (solid state disk) of large memory. Active research is underway for the efficient use of flash memory. However, NAND flash memory based storage devices exhibit unique hardware characteristics, such as erasing structure, and the B-tree index structure causes performance degradation when repeated writing requests are made. In order to enhance these problems, the present paper proposes to use NAND flash memory-based failure recovery improvement technique using the T*-tree. After conducting performance evaluation of the proposed technique and the existing technique, the proposed technique was found to be more efficient in its performance by 69%, compared to the existing technique.

목차

Abstract
 1. Introduction
 2. Related Researches
  2.1. NAND Flash Memory Method Using the B+-Tree
  2.2. NAND Flash MR-Tree Delay Computation Method
  2.3. NAND Flash File Crash Recovery Techniques
  2.4. IBSF Technique
  2.5. BISLD Technique
  2.6. T*-Tree Index Technique
 3. NAND Flash Memory-Based Failure Recovery Method Using T*-Tree
  3.1. T*-ISLD Method Recovery System Structure
  3.2. Commit Policy
  3.3. Failure Recovery Algorithm
 4. Performance Evaluation
  4.1. Performance Comparison Analysis
 5. Conclusion
 References

키워드

저자

• Seong-Soo Han [ Ed.D.,Bucheon University, Bucheon, Korea ]
• Sung-Je Cho [ Department of Education,Dongbang Culture Graduate University, Seoul, Korea ]

참고문헌

발행기관

간행물

표지보기 관심저널 등록

• 간행물명

  International Journal of Control and Automation

• 간기

  월간

• pISSN

  2005-4297

• 수록기간

  2008~2016

• 십진분류

  KDC 505 DDC 605