This study is to analyze the subthreshold transmission characteristics for the change of gate voltage of asymmetric double gate MOSFET. Asymmetric double gate MOSFET has the advantage of reducing short channel effects by controlling current flow by top/bottom gate voltage. Hermeneutical potential distributions were obtained by using Poisson’s equation to analyze transmission characteristics by top/bottom gate voltage. Gaussian function was used as charge distribution. In order to analyze off-current and subthreshold swing, hermeneutic potential distributions were used. In conclusion, it was found that off-current depended on electron concentration affecting current flow, and subthreshold swing depended on the conduction path. Therefore, transmission characteristics of subthreshold were greatly affected by top/bottom gate voltage, which should be considered designing asymmetric double gate MOSFET.
목차
Abstract 1. Introduction 2. Model for Off-current and Subthreshold Swing of Asymmetric DGMOSFET 3. Transmission Characteristics in Subthreshold Area of Asymmetric DGMOSFET 4. Conclusion References
보안공학연구지원센터(IJCA) [Science & Engineering Research Support Center, Republic of Korea(IJCA)]
설립연도
2006
분야
공학>컴퓨터학
소개
1. 보안공학에 대한 각종 조사 및 연구
2. 보안공학에 대한 응용기술 연구 및 발표
3. 보안공학에 관한 각종 학술 발표회 및 전시회 개최
4. 보안공학 기술의 상호 협조 및 정보교환
5. 보안공학에 관한 표준화 사업 및 규격의 제정
6. 보안공학에 관한 산학연 협동의 증진
7. 국제적 학술 교류 및 기술 협력
8. 보안공학에 관한 논문지 발간
9. 기타 본 회 목적 달성에 필요한 사업
간행물
간행물명
International Journal of Control and Automation
간기
월간
pISSN
2005-4297
수록기간
2008~2016
십진분류
KDC 505DDC 605
이 권호 내 다른 논문 / International Journal of Control and Automation Vol.8 No.3