Earticle

초록

영어

The reason for the trend in high-level large-area photomasks is that mask size is becoming larger and the line size and gap design is becoming thinner. In addition, the uniformity requirements for producing photomasks are becoming stricter. Consequently, the difficulties faced in manufacturing photomasks have substantially increased and a particular graphic process is required to assist with improving the yield of photomask production. During the etching process of mask production, a non-uniform etching rate produces an inferior uniformity of the critical dimensions. The reasons for the inferior etching rate results include the uniformity of the photomask pattern, the spin speed of the etching machine, and the nozzle of the etching arms. This research focuses on the photomask pattern line-width compensation for improving uniformity and precision. The research combines logical operations to select the patterns that are necessary for special compensation, adding the appropriate compensation value to the pattern and combining it with the original pattern to generate a complete photomask pattern to compensate for the inferior etching rate that produces inferior line-width uniformity.

목차

Abstract
 I. INTRODUCTION
 II. RELATED WORKS
 III. RESEARCH METHOD
 IV. CONCLUSION
 V. REFERENCES

키워드

저자

• Wen-Hsing Kao [ Department of Information Technology Overseas Chinese University Taichung, Taiwan, ROC ]
• Bo-Shen Liou [ Department of Information Management Overseas Chinese University Taichung, Taiwan, ROC ]
• Wen-Hsiang Shen [ Department of Information Management Overseas Chinese University Taichung, Taiwan, ROC ] Corresponding Author
• Yung-Lung Tsou [ Department of Information Management Overseas Chinese University Taichung, Taiwan, ROC ]

참고문헌

발행기관

간행물

표지보기 관심저널 등록

• 간행물명

  JoC [Journal of Convergence]

• 간기

  계간

• pISSN

  2093-7741

• eISSN

  2093-775X

• 수록기간

  2010~2015

• 십진분류

  KDC 004 DDC 004