SSDs use multiple NAND flash memory chips as storage media and deploy large sized RAM inside it in order to maintain the FTL mapping table. The rest portion of the inner RAM can be used as buffer. The buffer absorbs the read/write requests by file systems and thus the resulting write requests to NAND flash memory is determined by the buffer replacement scheme. The block-level LRU replacement schemes, which manages the buffer in NAND block unit, generates a large sized write pattern that is NAND-friendly. However, the existing schemes do not consider the re-write probability of each page. This paper presents a new block-level replacement policy for SSDs. The presented scheme evicts only cold pages that its re-write probability is low considering the re-write probability, which can contribute to improve the buffer hit ratio.
목차
Abstract 1. Introduction 2. Related Work 3. Block-level Replacement Scheme Considering a Re-write Probability 4. Performance Evaluation 5. Conclusion Acknowledgements References
키워드
re-write probabilitybuffer replacementSolid State DrivesNAND flash memory
저자
Ilhoon Shin [ Electronic and IT Media Engineering Department, Seoul National University of Science and Technology ]
보안공학연구지원센터(IJMUE) [Science & Engineering Research Support Center, Republic of Korea(IJMUE)]
설립연도
2006
분야
공학>컴퓨터학
소개
1. 보안공학에 대한 각종 조사 및 연구
2. 보안공학에 대한 응용기술 연구 및 발표
3. 보안공학에 관한 각종 학술 발표회 및 전시회 개최
4. 보안공학 기술의 상호 협조 및 정보교환
5. 보안공학에 관한 표준화 사업 및 규격의 제정
6. 보안공학에 관한 산학연 협동의 증진
7. 국제적 학술 교류 및 기술 협력
8. 보안공학에 관한 논문지 발간
9. 기타 본 회 목적 달성에 필요한 사업
간행물
간행물명
International Journal of Multimedia and Ubiquitous Engineering
간기
월간
pISSN
1975-0080
수록기간
2008~2016
등재여부
SCOPUS
십진분류
KDC 505DDC 605
이 권호 내 다른 논문 / International Journal of Multimedia and Ubiquitous Engineering Vol.7 No2