Earticle

초록

영어

The Terahertz performances of Wurtzite (α-phase) and Zinc-Blende (β-phase) of GaN based p+pnn+ DDR IMPATTs has been investigated at optimum bias current density. The modeling and simulation based on drift diffusion model has been carried out to study the DC and small signal properties of the device. The bias current optimization is based on maximum conversion efficiency and device negative resistance at 0.3 THz. The simulation results obtained reveals the strong potentiality of DDR IMPATTs based on α- and β-GaN as a powerful solid state source for generating high power in Terahertz domain. The conversion efficiency of the device is found to be 12.3% at an optimum bias current density of 0.2×108 A/m2 for α-GaN IMPATTs while the same result for β-GaN IMPATTs is 11.5% at 3.1×109 A/m2. The design results presented in the paper are very promising and immensely useful to realize experimentally α- and β-GaN IMPATTs at THz frequency.

목차

Abstract
 1. Introduction
 2. Simulation Methodologies
  2.1. Doping Profile, Material & Design parameters of GaN based DDR Impatts
  2.2. Computer Simulation Techniques
 3. Results and Discussions
 4. Conclusion
 References

키워드

저자

• Soumen Banerjee [ 1Hooghly Engineering & Technology College West Bengal, India. ]
• Priya Chakrabarti [ Institute of Engineering & Management Kolkata, India. ]
• Riya Baidya [ Institute of Engineering & Management Kolkata, India. ]

참고문헌

발행기관

간행물

표지보기 관심저널 등록

• 간행물명

  International Journal of Advanced Science and Technology

• 간기

  월간

• pISSN

  2005-4238

• 수록기간

  2008~2016

• 십진분류

  KDC 505 DDC 605