Earticle

초록

영어

The properties and performance of DDR p+pnn+ Wurtzite Gallium Nitride (Wz-GaN) Impatt diodes at Terahertz (THz) frequencies has been investigated for optimum bias current density through modeling and simulation technique. A double iterative computer method based on drift-diffusion model has been used to study the DC and small signal admittance properties of the device. The bias current density is optimized with respect to maximum conversion efficiency and device negative resistance at both 0.3 and 0.5 THz frequencies. The simulation studies show that these devices are potential sources for generating high RF power. The DC-to-RF conversion efficiency of the device is found to be 12.3% and 11.4% at 0.3 THz and 0.5 THz at the optimum bias current density of 2 x 107 A/m2 and 1.8 x 108 A/m2 respectively. The design results presented in this paper will be useful to realize experimentally Wz-GaN IMPATTs for Terahertz frequencies.

목차

Abstract
 1. Introduction
 2. Simulation Methodologies
  2.1. Design of Doping Prof
  2.2. Material & Design Parameters
  2.3. Computer Simulation Techniques
 3. Results and Discussions
 4. Conclusion
 References

키워드

저자

• Soumen Banerjee [ Hooghly Engineering & Technology College ]
• Moumita Mukherjee [ Centre of Millimeter-wave Semiconductor Devices & Systems (CMSDS) University of Calcutta ]
• J. P. Banerjee [ Centre of Millimeter-wave Semiconductor Devices & Systems (CMSDS) University of Calcutta ]

참고문헌

발행기관

간행물

표지보기 관심저널 등록

• 간행물명

  International Journal of Advanced Science and Technology

• 간기

  월간

• pISSN

  2005-4238

• 수록기간

  2008~2016

• 십진분류

  KDC 505 DDC 605