Recently, A N2 gas generator has become a very popular issue in application to semiconductor production process. An experimental study has been carried out to investigate the production performance as a N2 purity and production of N2 gas generator. The N2 gas generator used a small size system with two adsorption towers and an air compressor as flow rate 20 m3/h. The N2 gas generator system size is width 2270 mm, length 850 mm and height 2135mm. An experimental data has been measured as the variation of a adsorption temperature, adsorption pressure and adsorption time. The results indicate that the N2 gas production increase in case of decreasing adsorption temperature, increasing adsorption pressure and decreasing adsorption time. The N2 purity is highest value of 99.93% when the governor orifice diameter is 0.5 mm.
목차
Abstract 1. 서론 2. 실험장치 및 방법 2.1 실험장치 2.2 실험방법 3. 실험결과 및 고찰 3.1 오리피스 구경 변화 3.2 흡착제 변화 3.3 흡착온도 변화 3.4 흡착압력 변화 3.5 흡착시간 변화 4. 결론 참고문헌
키워드
N2 gas generator(질소발생기)Adsorption tower(흡착탑)Oxygen concentration(산소농도)Adsorption temperature(흡착온도)Adsorption pressure(흡착압력)