Earticle

초록

영어

Metal-semiconductor contact is very important for the operating property of semiconductor detector. Cd0.96Zn0.04Tesemiconductor crystal was grown with Bridgman method, and the crystal was cut and polished. EPMA (Electron ProbeMicro Analyzer) and ICP-MS (Inductively Coupled Plasma Mass Spectrometry) analysis were done to obtain the chemicalcomposition and impurity of the crystal. Metal contact was deposited with thermal evaporator on both sides of the crystal.Detectors with Au/CZT/Au and In/CZT/Au structure were made, and I-V curve and the energy spectrum were measuredwith the detectors. It could be seen that the detector with the In/CZT/Au structure has superior property than the detectorwith Au/CZT/Au structure when the crystal resistivity was low. However, the metal contact structure effect becomes lowwhen the crystal resistivity was high.

목차

abstract
 1. INTRODUCTION
 2. MATERIALS AND METHODS
 3. RESULTS AND DISCUSSION
 4. CONCLUSION
 REFERENCES

키워드

저자

• SE-HWAN PARK [ Korea Atomic Energy Research Institute ] Corresponding author
• HYUNG SIK PARK [ Korea Atomic Energy Research Institute ]
• JAE-HYUNG LEE [ Korea Atomic Energy Research Institute ]
• HAN SOO KIM [ Korea Atomic Energy Research Institute ]
• JANG HO HA [ Korea Atomic Energy Research Institute ]

참고문헌

발행기관

간행물

표지보기 관심저널 등록

• 간행물명

  방사선방어학회지 [Journal of Radiation Protection and Research]

• 간기

  계간

• pISSN

  2508-1888

• 수록기간

  1976~2026

• 등재여부

  KCI 등재,SCOPUS

• 십진분류

  KDC 559 DDC 629