Earticle

초록

영어

In this paper, a rotating-gate field-effect transistor has been developed to be used as a self-powered sensor. The developed device showed the drain current increased according to the rotation velocity of the gate motor and saturated under a sufficient drain voltage.

목차

Abstract
I. INTRODUCTION
II. EXPERIMENTAL DETAILS
III. RESULTS AND DISCUSSION
IV. CONCLUSIONS
ACKNOWLEDGMENT
REFERENCES

저자

• Hyunji Shin [ R&E Center for ICT-Future Vehicle Convergence Engineering Inha University ]
• Xue Zhang [ Ocean Science and Engineering Shandong University of Science and Technology Qingdao, China ]
• Dae Yu Kim [ Electrical Engineering Inha University ] Corresponding author

참고문헌