Earticle

초록

영어

The rotating gate driving transistors based on the triboelectric mechanism has been developed. The fabricated device is switched on by triboelectricity without applying a gate voltage, and the output current increases as the gate rotation becomes faster or the friction layer becomes thicker.

목차

Abstract
I. INTRODUCTION
II. EXPERIMENTAL PROCEDURE
III. RESULTS AND DISCUSSION
IV. CONCLUSIONS
REFERENCES

저자

• Hyunji Shin [ dept. ICT-Future Vehicle Convergence Education & Research Center Inha University ]
• Hang Chan Jo [ dept. Electrical and Computer Engineering Inha University ]
• Seul-Lee Lee [ Center for Sensor Systems Inha University ]
• Dong-Jin Lee [ Inha Research Institute for Aerospace Medicine Inha University ]
• Myeongjoo Son [ Inha Research Institute for Aerospace Medicine Inha University ]
• Xue Zhang [ coll. Ocean Science and Engineering Shandong University of Science and Technology Qingdao, China ]
• Dae Yu Kim [ dept. Electrical and Computer Engineering Incheon, Republic of Korea ] Corresponding Author

참고문헌